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  page 0 mr16r1624(8/g)eg0 mr18r1624(8/g)eg0 version 1.0 may 2004 change history version 0.1 (december 2003) - preliminary * first copy. * based on the 1.0 ver. (july 2002) 256/288mbit d-die rimm ? module datasheet version 1.0 (may 2004) * eliminate "preliminary"
page 1 version 1.0 may 2004 mr16r1624(8/g)eg0 mr18r1624(8/g)eg0 overview the rimm ? module is a general purpose high- performance memory module suitable for use in a broad range of applica- tions including computer me mory, personal computers, workstations and other appli cations where high bandwidth and low latency are required. the rimm module consists of 256/288mb rdram ? devices. these are extremely high-speed cmos drams organized as 16m words by 16 or 18 bits. the use of rambus signaling level (rsl ) technology permits up to 1066 mhz transfer rates while using conventional system and board design te chnologies. rdram ? devices are capable of sustained data tran sfers at 0.94 ns per two bytes (7.5ns per 16 bytes). the rdram architecture enables the highest sustained bandwidth for multiple, simu ltaneous, randomly addressed, memory transactions. the sepa rate control and data buses with independent row and column control yield over 95% bus efficiency. the rdram de vice's 32-bank architecture supports up to four simultaneous transactions per device. features ? high speed up to 1066 mhz rdram storage ? 184 edge connector pads with 1mm pad spacing ? module pcb size : 133.35mm x 31.75mm x 1.27mm (5.25 ? x 1.25 ? x 0.05 ? ) - 256mb and 288mb base pc800 rimm module ? module pcb size : 133. 35mm x 34.93mm x 1.27mm (5.25 ? x 1.375 ? x 0.05 ? ) - 256mb and 288mb base pc1066 rimm module ? each rdram device has 32 ba nks, for a total of 512, 256, 128 banks on each 512/576mb, 256/288mb, 128/144mb module respectively ? gold plated edge c onnector pad contacts ? serial presence detect(spd) support ? operates from a 2.5 volt supply (5%) ? powerdown self refresh modes ? separate row and column buses for higher efficiency ? wbga lead free package (92/84 balls) key timing parameters/part numbers the following table lists th e frequency and latency bins available for rimm modules. table 1: part number by freq. & latency form factor the rimm modules are offered in 184-pad 1mm edge connector pad pitch suitable for 184 contact rimm connec- tors. figure 1 below, shows a sixteen device rimm module. organization speed part number bin i/o freq. (mhz) t rac (row access time) ns 64m x 16/18 -ct9 1066 32p mr16/18r1624eg0-ct9 -cm8 800 40 mr16/18r1624eg0-cm8 -ck8 800 45 mr16/18r1624eg0-ck8 128m x 16/18 -ct9 1066 32p mr16/18r1628eg0-ct9 -cm8 800 40 mr16/18r1628eg0-cm8 -ck8 800 45 mr16/18r1628eg0-ck8 256m x 16/18 -ct9 1066 32p mr16/18r162geg0-ct9 -cm8 800 40 mr16/18r162geg0-cm8 -ck8 800 45 mr16/18r162geg0-ck8 figure 1: rimm module show n with heat spreader removed note: on double sided modules, rdram devices are also installed on bottom side of pcb. (16mx16)*4(8/16)pcs rimm ? module based on 256mb e-die, 32s banks,16k/32ms ref, 2.5v (16mx18)*4(8/16)pcs rimm ? module based on 288mb e-die, 32s banks,16k/32ms ref, 2.5v
page 2 mr16r1624(8/g)eg0 mr18r1624(8/g)eg0 version 1.0 may 2004 table 2: module pad numbers and signal names pin pin name pin pin name pin pin name pin pin name a1 gnd b1 gnd a47 nc b47 nc a2 ldqa8 b2 ldqa7 a48 nc b48 nc a3 gnd b3 gnd a49 nc b49 nc a4 ldqa6 b4 ldqa5 a50 nc b50 nc a5 gnd b5 gnd a51 vref b51 vref a6 ldqa4 b6 ldqa3 a52 gnd b52 gnd a7 gnd b7 gnd a53 scl b53 sa0 a8 ldqa2 b8 ldqa1 a54 vdd b54 vdd a9 gnd b9 gnd a55 sda b55 sa1 a10 ldqa0 b10 lcfm a56 svdd b56 svdd a11 gnd b11 gnd a57 swp b57 sa2 a12 lctmn b12 lcfmn a58 vdd b58 vdd a13 gnd b13 gnd a59 rsck b59 rcmd a14 lctm b14 nc a60 gnd b60 gnd a15 gnd b15 gnd a61 rdqb7 b61 rdqb8 a16 nc b16 lrow2 a62 gnd b62 gnd a17 gnd b17 gnd a63 rdqb5 b63 rdqb6 a18 lrow1 b18 lrow0 a64 gnd b64 gnd a19 gnd b19 gnd a65 rdqb3 b65 rdqb4 a20 lcol4 b20 lcol3 a66 gnd b66 gnd a21 gnd b21 gnd a67 rdqb1 b67 rdqb2 a22 lcol2 b22 lcol1 a68 gnd b68 gnd a23 gnd b23 gnd a69 rcol0 b69 rdqb0 a24 lcol0 b24 ldqb0 a70 gnd b70 gnd a25 gnd b25 gnd a71 rcol2 b71 rcol1 a26 ldqb1 b26 ldqb2 a72 gnd b72 gnd a27 gnd b27 gnd a73 rcol4 b73 rcol3 a28 ldqb3 b28 ldqb4 a74 gnd b74 gnd a29 gnd b29 gnd a75 rrow1 b75 rrow0 a30 ldqb5 b30 ldqb6 a76 gnd b76 gnd a31 gnd b31 gnd a77 nc b77 rrow2 a32 ldqb7 b32 ldqb8 a78 gnd b78 gnd a33 gnd b33 gnd a79 rctm b79 nc a34 lsck b34 lcmd a80 gnd b80 gnd a35 vcmos b35 vcmos a81 rctmn b81 rcfmn a36 sout b36 sin a82 gnd b82 gnd a37 vcmos b37 vcmos a83 rdqa0 b83 rcfm a38 nc b38 nc a84 gnd b84 gnd a39 gnd b39 gnd a85 rdqa2 b85 rdqa1 a40 nc b40 nc a86 gnd b86 gnd a41 vdd b41 vdd a87 rdqa4 b87 rdqa3 a42 vdd b42 vdd a88 gnd b88 gnd a43 nc b43 nc a89 rdqa6 b89 rdqa5 a44 nc b44 nc a90 gnd b90 gnd a45 nc b45 nc a91 rdqa8 b91 rdqa7 a46 nc b46 nc a92 gnd b92 gnd
page 3 version 1.0 may 2004 mr16r1624(8/g)eg0 mr18r1624(8/g)eg0 table 3: module connector pad description signal pins i/o type description gnd a1, a3, a5, a7, a9, a11, a13, a15, a17, a19, a21, a23, a25, a27, a29, a31, a33, a39, a52, a60, a62, a64, a66, a68, a70, a72, a74, a76, a78, a80, a82, a84, a86, a88, a90, a92, b1, b3, b5, b7, b9, b11, b13, b15, b17, b19, b21, b23, b25, b27, b29, b31, b33, b39, b52, b60, b62, b64, b66, b68, b70, b72, b74, b76, b78, b80, b82, b84, b86, b88, b90, b92 ground reference for rdram core and interface. 72 pcb connector pads. lcfm b10 irsl clock from master. interface cl ock used for receiving rsl signals from the channel. positive polarity. lcfmn b12 irsl clock from master. interface cl ock used for receiving rsl signals from the channel. negative polarity. lcmd b34 iv cmos serial command used to read from and write to the control registers. also used for power management. lcol4.. lcol0 a20, b20, a22, b22, a24 irsl column bus. 5-bit bus containing control and address infor- mation for column accesses. lctm a14 irsl clock to master. interface cloc k used for transmitting rsl signals to the channel. positive polarity. lctmn a12 irsl clock to master. interface cloc k used for transmitting rsl signals to the channel. negative polarity. ldqa8.. ldqa0 a2, b2, a4, b4, a6, b6, a8, b8, a10 i/o rsl data bus a. a 9-bit bus carrying a byte of read or write data between the channel and the rdram device. ldqa8 is non-functional on modules with x16 rdram devices ldqb8.. ldqb0 b32, a32, b30, a30, b28, a28, b26, a26, b24 i/o rsl data bus b. a 9-bit bus carrying a byte of read or write data between the channel and the rdram device. ldqb8 is non- functional on modules with x16 rdram devices. lrow2.. lrow0 b16, a18, b18 irsl row bus. 3-bit bus containing control and address information for row accesses. lsck a34 iv cmos serial clock input. clock source used to read from and write to the rdram co ntrol registers. nc a16, b14, a38, b38, a40, b40, a43, b43, a44, b44, a45, b45, a46, b46, a47, b47, a48, b48, a49, b49, a50, b50, a77, b79 these pads are not connected. these 24 connector pads are reserved for future use. rcfm b83 irsl clock from master. interface cl ock used for receiving rsl signals from the channel. positive polarity. rcfmn b81 irsl clock from master. interface cl ock used for receiving rsl signals from the channel. negative polarity. rcmd b59 iv cmos serial command input. pin used to read from and write to the control registers. also used for power management.
page 4 mr16r1624(8/g)eg0 mr18r1624(8/g)eg0 version 1.0 may 2004 rcol4.. rcol0 a73, b73, a71, b71, a69 irsl column bus. 5-bit bus containing control and address infor- mation for column accesses. rctm a79 irsl clock to master. interface clock used for transmitting rsl signals to the channel. positive polarity. rctmn a81 irsl clock to master. interface clock used for transmitting rsl signals to the channel. negative polarity. rdqa8.. rdqa0 a91, b91, a89, b89, a87, b87, a85, b85, a83 i/o rsl data bus a. a 9-bit bus carrying a byte of read or write data between the channel and th e rdram device. rdqa8 is non-functional on modules x16 rdram devices. rdqb8.. rdqb0 b61, a61, b63, a63, b65, a65, b67, a67, b69 i/o rsl data bus b. a 9-bit bus carrying a byte of read or write data between the channel and th e rdram device. rdqb8 is non-functional on modules x16 rdram devices. rrow2.. rrow0 b77, a75, b75 irsl row bus. 3-bit bus containing control and address information for row accesses. rsck a59 iv cmos serial clock input. clock source used to read from and write to the rdram control registers. sa0 b53 isv dd serial presence detect address 0. sa1 b55 isv dd serial presence detect address 1. sa2 b57 isv dd serial presence detect address 2. scl a53 isv dd serial presence detect clock. sda a55 i/o sv dd serial presence detect da ta (open collector i/o). sin b36 i/o v cmos serial i/o for reading from and wr iting to the control registers. attaches to sio0 of the first rdram device on the module. sout a36 i/o v cmos serial i/o for reading from and wr iting to the control registers. attaches to sio1 of the last rdram device on the module. sv dd a56, b56 spd voltage. used for signal s scl, sda, sw e, sa0, sa1 and sa2. swp a57 isv dd serial presence detect write pr otect (active high). when low, the spd can be written as well as read. v cmos a35, b35, a37, b37 cmos i/o voltage. us ed for signals cmd, sck, sin, sout. vdd a41, a42, a54, a58, b41, b42, b54, b58 supply voltage for the rdram core and interface logic. vref a51, b51 logic threshold refe rence voltage for rsl signals. signal pins i/o type description
page 5 version 1.0 may 2004 mr16r1624(8/g)eg0 mr18r1624(8/g)eg0 dqa8 dqa7 dqa6 dqa5 dqa4 dqa3 dqa2 dqa1 dqa0 cfm cfmn ctm ctmn row2 row1 row0 col4 col3 col2 col1 col0 dqb0 dqb1 dqb2 dqb3 dqb4 dqb5 dqb6 dqb7 dqb8 sio0 sio1 sck cmd vref rdram device(256/288mb) rdqa8 rdqa7 rdqa6 rdqa5 rdqa4 rdqa3 rdqa2 rdqa1 rdqa0 rcfm rcfmn rctm rctmn rrow2 rrow1 rrow0 rcol4 rcol3 rcol2 rcol1 rcol0 rdqb0 rdqb1 rdqb2 rdqb3 rdqb4 rdqb5 rdqb6 rdqb7 rdqb8 ldqa8 ldqa7 ldqa6 ldqa5 ldqa4 ldqa3 ldqa2 ldqa1 ldqa0 lcfm lcfmn lctm lctmn lrow2 lrow1 lrow0 lcol4 lcol3 lcol2 lcol1 lcol0 ldqb0 ldqb1 ldqb2 ldqb3 ldqb4 ldqb5 ldqb6 ldqb7 ldqb8 u1 sin lsck lcmd v ref sout rsck rcmd vdd gnd 2 per rdram device scl sda a0 a1 scl sa0 sa1 sda serial presence detect note 1. rambus ? channel signals form a loop through the rimm module, with the exception of the sio chain. dqa8 dqa7 dqa6 dqa5 dqa4 dqa3 dqa2 dqa1 dqa0 cfm cfmn ctm ctmn row2 row1 row0 col4 col3 col2 col1 col0 dqb0 dqb1 dqb2 dqb3 dqb4 dqb5 dqb6 dqb7 dqb8 sio0 sio1 sck cmd vref rdram device (256/288mb) dqa8 dqa7 dqa6 dqa5 dqa4 dqa3 dqa2 dqa1 dqa0 cfm cfmn ctm ctmn row2 row1 row0 col4 col3 col2 col1 col0 dqb0 dqb1 dqb2 dqb3 dqb4 dqb5 dqb6 dqb7 dqb8 sio0 sio1 sck cmd vref rdram device (256/288mb) dqa8 dqa7 dqa6 dqa5 dqa4 dqa3 dqa2 dqa1 dqa0 cfm cfmn ctm ctmn row2 row1 row0 col4 col3 col2 col1 col0 dqb0 dqb1 dqb2 dqb3 dqb4 dqb5 dqb6 dqb7 dqb8 sio0 sio1 sck cmd vref rdram device (256/288mb) v ref gnd 1 per 2 rdram devices v cmos gnd 1 per 2 rdram devices a2 sa2 wp swp u0 vcc sv dd 0.22/0.1 f a 0.22/0.1 f a 0.22/0.1 f a sv dd gnd plus one near connector 47k ? u2 u3 un ? ? ? ? ? ? note 2. see serial presence detection specification for information on the spd device and its contents. module capacity n 512/576mb 16 256/288mb 8 128/144mb 4 0.22/0.1 f a a . ? 0.1 f : 800mhz products for 128/144mb and 256/288mb ? 0.22 f : the other products figure 2: rimm module functional diagram
page 6 mr16r1624(8/g)eg0 mr18r1624(8/g)eg0 version 1.0 may 2004 absolute maximum ratings dc recommended electrical conditions table 4: absolute maximum ratings symbol parameter min max unit v i,abs voltage applied to any rsl or cmos signal pad with respect to gnd - 0.3 v dd + 0.3 v v dd,abs voltage on vdd with respect to gnd - 0.5 v dd + 1.0 v t store storage temperature - 50 100 c t plate plate temperature - 92 c table 5: dc recommended electrical conditions symbol parameter and conditions min max unit v dd supply voltage 2.50 - 0.13 2.50 + 0.13 v v cmos cmos i/o power supply at pad for 2.5v controllers: cmos i/o power supply at pad for 1.8v controllers: v dd 1.8 - 0.1 v dd 1.8 + 0.2 v v v ref reference voltage 1.4 - 0.2 1.4 + 0.2 v v spd serial presence detector- po sitive power supply 2.2 3.6 v table 6: rimm module capacity and number of rdram device rimm module capacity: 512/576mb 256/288mb 128/144mb number of 256/288mb rdram devices 16 8 4
page 7 version 1.0 may 2004 mr16r1624(8/g)eg0 mr18r1624(8/g)eg0 rimm module current profile table 7: rimm module current profile i dd rimm module capacity 512/576mb 256/288mb 128/144mb unit number of 256/288mb rdram devices 16 8 4 rimm module power conditions a freq max max max i dd1 one rdram device in read b , bal- ance in nap mode -1066 760/810 c 728/778 712/762 ma -800 620/660 588/628 572/612 i dd2 one rdram device in read b , bal- ance in standby mode -1066 2275/2325 1435/1485 1015/1065 ma -800 1985/2025 1225/1265 845/885 i dd3 one rdram device in read b , bal- ance in active mode -1066 3100/3150 1820/1870 1180/1230 ma -800 2585/2625 1505/1545 965/1005 i dd4 one rdram device in write, bal- ance in nap mode -1066 750/800 718/768 702/752 ma -800 605/640 573/608 557/592 i dd5 one rdram device in write, bal- ance in standby mode -1066 2265/2315 1425/1475 1005/1055 ma -800 1970/2005 1210/1245 830/865 i dd6 one rdram device in write, bal- ance in active mode -1066 3090/3140 1810/1860 1170/1220 ma -800 2570/2605 1490/1525 950/985 a. actual power will depend on memory controller and usage patterns. power does not include refresh current. b. i/o current is a function of the % of 1 ? s, to add i/o power for 50% 1 ? s for a x16 need to add 257ma or 290ma for x18 ecc module for the following: v dd = 2.5v, v term = 1.8v, v ref = 1.4v and v dil = v ref - 0.5v. c. current values represent x16(non-ecc) / x18(ecc)
page 8 mr16r1624(8/g)eg0 mr18r1624(8/g)eg0 version 1.0 may 2004 ac electrical specifications adjusted ? t pd specification table 8: ac electrical specifications symbol parameter and conditions min typ max unit z l module impedance of rsl signals 25.2 28 30.8 ? z ul-cmos module impedance of sck and cmos signals 23.8 28 32.2 ? t pd propagation delay variation of rsl signals. average clock delay from finger to finger of all rsl clock nets (ctm, ctmn, cfm, and cfmn) - see table10 a,b ns ? t pd propagation delay variation of rsl signals with respect to t pd b,c for 4 and 8 device modules -21 21 ps propagation delay variation of rsl signals with respect to t pd b,c for 16 device modules -24 24 ps ? t pd-cmos propagation delay variation of sck signals with respect to an average clock delay -250 250 ps ? t pd-sck,cmd propagation delay variation of cmd signals with respect to sck signal -200 200 ps v /v in attenuation limit see table10 a % v xf /v in forward crosstalk coef ficient (300ps input rise time @ 20%-80%) see table10 a % v xb /v in backward crosstalk coefficient (300ps input rise time @ 20%- 80%) see table10 a % a. table 10 lists parameters and specifications for different storage capacity rimm modules that use 256mb or 288mb rdram devic es. b. t pd or average clock delay is defined as the delay from finger to finger of rsl signal. c. if the rimm module meets the following specification, then it is compliant to the specification. if the rimm module does not meet these specifica tions, then the specification can be adjusted by the ? adjusted ? t pd specification ? table 9 below. table 9: adjusted ? t pd specification symbol parameter and condi tions adjusted min/max absolute min / max unit ? t pd propagation delay variation of rsl signals with respect to t pd for 4 and 8 device modules +/-[20+(18*n* ? z0)] a -30 30 ps propagation delay variation of rsl signals with respect to t pd for 16 device modules +/-[24+(18*n* ? z0)] a -50 50 ps a. where: n = number of rdram devices installed on the rimm module ? z0 = delta z0% = (max z0 - min z0)/(min z0) (max z0 and min z0 are obtained from the loaded (high impedance) impedance coupons of all rsl layers on the modules)
page 9 mr16r1624(8/g)eg0 mr18r1624(8/g)eg0 version 1.0 may 2004 ac electrical specificat ions for rimm modules table 10: ac electrical spec ifications for rimm modules symbol rimm module capacity 512/576mb 256/288mb 128/144mb unit number of 256/288mb rdram devices 16 8 4 parameter and condition for rimm modules freq. max max max t pd propagation delay, all rsl signals -1066 2.11 1.56 1.56 ns -800 2.11 1.56 1.56 v /v in attenuation limit -1066 27.0 17.0 17.0 % -800 25.0 16.0 16.0 v xf /v in forward crosstalk coefficient (300ps input rise time @ 20%-80%) -1066 8.0 4.0 4.0 % -800 8.0 4.0 4.0 v xb /v in backward crosstalk coefficient (300ps input rise time @ 20%-80%) -1066 2.5 2.0 2.0 % -800 2.5 2.0 2.0 r dc dc resistance limit -1066 1.2 0.8 0.6 ? -800 1.2 0.8 0.6
page 10 mr16r1624(8/g)eg0 mr18r1624(8/g)eg0 version 1.0 may 2004 figure 3: 256mb/288mb base rimm module pcb physical dimensions physical dimensions -1 ( for pcb ) the following defines the rimm module dimensions. all units are in millimeters with inches in brackets[ ], where appropriate. the dimensions without tolerance specif ication use the default tolerance of 0.127[ 0.005]. 133.35 0.127[5.250 0.005] 45.00[1.772] 1.00[0.039] 5.68[0.2236] 11.50[0.453] 45.00[1.772] 78.175[3.078] 55.175 0.08[2.172 0.003] 31.75[1.25] 7.468[0.294] 4.50[0.177] a-1 a-92 detail a detail b b-1 0.80 0.10 0.15 0.10 2.99 0.05 [0.031 0.004] [0.006 0.004] [0.12 0.002] detail a 3.00 0.10 2.00 0.10 detail b [0.12 0.004] [0.079 0.004] min.4.88 [0.192] r 1.00 1.00[0.039] 3.00[0.118] 6.35[0.25] r 2.00 component area (a side) dia 2.44 120.65[4.75] component area (b side) 4.00 0.15 [0.157 0.006] 29.21[1.15] 17.78[0.700] note : the gray area above represents the contact surface of the heat spreader. + + min.6.35[0.25] + heat spreader b-92 8.60[0.339] 133.35 0.127[5.250 0.005] 45.00[1.772] 1.00[0.039] 5.68[0.2236] 11.50[0.453] 45.00[1.772] 78.175[3.078] 55.175 0.08[2.172 0.003] 31.75[1.25] 7.468[0.294] 4.50[0.177] a-1 a-92 detail a detail b b-1 0.80 0.10 2.99 0.05 [0.031 0.004] [0.12 0.002] detail a 3.00 0.10 2.00 0.10 detail b [0.12 0.004] [0.079 0.004] min.4.88 [0.192] r 1.00 1.00[0.039] 3.00[0.118] 6.35[0.25] r 2.00 component area (a side) dia 2.44 120.65[4.75] component area (b side) 4.00 0.15 [0.157 0.006] 29.21[1.15] 17.78[0.700] note : the gray area above represents the contact surface of the heat spreader. + + min.6.35[0.25] + heat spreader b-92 8.60[0.339] min.6.35[0.25] min.6.35[0.25]
page 11 mr16r1624(8/g)eg0 mr18r1624(8/g)eg0 version 1.0 may 2004 figure 4: 256mb/288mb base rimm module pcb physical dimensions physical dimensions -2 ( for pcb ) the following defines the rimm module dimensions. all units are in millimeters with inches in brackets[ ], where appropriate. the dimensions without tolerance specif ication use the default tolerance of 0.127[ 0.005]. 133.35 0.127[5.250 0.005] 45.00[1.772] 1.00[0.039] 5.68[0.2236] 11.50[0.453] 45.00[1.772] 78.175[3.078] 55.175 0.08[2.172 0.003] 34.93[1.375] 7.468[0.294] 4.50[0.177] a-1 a-92 detail a detail b b-1 0.80 0.10 0.15 0.10 2.99 0.05 [0.031 0.004] [0.006 0.004] [0.12 0.002] detail a 3.00 0.10 2.00 0.10 detail b [0.12 0.004] [0.079 0.004] min.4.88 [0.192] r 1.00 1.00[0.039] 3.00[0.118] 6.35[0.25] r 2.00 component area (a side) dia 2.44 120.65[4.75] component area (b side) 4.00 0.15 [0.157 0.006] 29.21[1.15] 17.78[0.700] note : the gray area above represents the contact surface of the heat spreader. + + min.6.35[0.25] + heat spreader b-92 8.60[0.339] min.6.35[0.25] min.6.35[0.25]
page 12 mr16r1624(8/g)eg0 mr18r1624(8/g)eg0 version 1.0 may 2004 physical dimensions -3 ( for heat spreader ) the following defines the rimm module dimensions. all units are in millimeters with inches in brackets[ ], where appropriate. the dimensions without tolerance specif ication use the default tolerance of 0.127[ 0.005]. 108.81 0.12[4.283 0.005] dia 2.36 0.05[0.09 0.001] 12.7 0.07[0.5 0.002] 12.7 0.07[0.5 0.002] warning ! hot surface http://www.samsungsemi.com 2.9 1.00 0.07 [0.04 0.002] warning ! hot surface http://www.samsungsemi.com 133.35 0.127[5.250 0.005] 127 0.25[5.0 0.009] 26.54[1.045] 26.54[1.045] center-point [0.114] 31.75[1.25] 13.7[0.539] a a 120.66 0.12[4.748 0.005] 127 0.25[5.0 0.009] material csp 1.27 0.10 [0.050 0.004] thermal conductive gap filling max 7.80 [0.307] pcb heat spreader [ double side module ] section a-a material csp 1.27 0.10 [0.050 0.004] thermal conductive gap filling max 4.70 [0.185] pcb heat spreader [ single side module ] section a-a figure 5: heat spread er physical dimensions
page 13 mr16r1624(8/g)eg0 mr18r1624(8/g)eg0 version 1.0 may 2004 physical dimensions -4 ( for heat spreader ) the following defines the rimm module dimensions. all units are in millimeters with inches in brackets[ ], where appropriate. the dimensions without tolerance specif ication use the default tolerance of 0.127[ 0.005]. 108.81 0.12[4.283 0.005] dia 2.36 0.05[0.09 0.001] 12.7 0.07[0.5 0.002] 12.7 0.07[0.5 0.002] warning ! hot surface http://www.samsungsemi.com 2.9 1.00 0.07 [0.04 0.002] warning ! hot surface http://www.samsungsemi.com 133.35 0.127[5.250 0.005] 127 0.25[5.0 0.009] 29.42[1.158] 29.42[1.158] center-point [0.114] 34.93[1.375] 16.5[0.649] a a 120.66 0.12[4.748 0.005] 127 0.25[5.0 0.009] material csp 1.27 0.10 [0.050 0.004] thermal conductive gap filling max 7.80 [0.307] pcb heat spreader [ double side module ] section a-a material csp 1.27 0.10 [0.050 0.004] thermal conductive gap filling max 4.70 [0.185] pcb heat spreader [ single side module ] section a-a figure 6: heat spread er physical dimensions
page 14 mr16r1624(8/g)eg0 mr18r1624(8/g)eg0 version 1.0 may 2004 standard rimm module marking the rimm modules availabl e from samsung are marked like figure 7 below. this ma rking also assists users to specify and verify if the corre ct rimm modules are installed in their systems. in the diagram, a label is shown attached to the rimm module ? s heat spreader. information contained on the label is specific to the rimm module and provides rdram device info rmation without requiring removal of the rimm module?s heat spreader. label field description marked text unit a vendor logo rimm module vendor samsung logo area samsung - b country country of origin korea - c year & week code manufactured year & week code yyww - d module memory capacity number of 8-bit or 9-bit mbytes of rdram storage in rimm module 128mb, 256mb, 512mb - e number of rdram devices number of rdram devices contained in the rimm module 4/8/16 rdram devices f ecc support indicates whether the ri mm module supports 8 (non ecc) or 9 (ecc) bit bytes blank = 8 bit bytes ecc = 9 bit bytes - g notice! hot surface caution notice. - - h caution logo iso standard - - i gerber & spd ve r s i o n pcb gerber file & spd code version used on rimm module gerber : 10 = 1.0 ver. 01 = 0.1 ver. spd : 2 = 1.3 ver. - j trac row access time -32p, -40, -45 ns k memory speed data transfer speed for rdram devices 1066, 800 mhz l part no. samsung rimm module part no. see table 1 - mr18r162geg0-ct9 1066-32p 102 korea 0420 512mb /16 ecc a b c d e f g l j h k i figure 7: rimm modu le marking example
page 15 mr16r1624(8/g)eg0 mr18r1624(8/g)eg0 version 1.0 may 2004 table of contents overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 key timing parameters/part numbers . . . . . . . . . . . . . . . . 1 module pad numbers and signal names . . . . . . . . . . . . . . 2 module connector pad description . . . . . . . . . . . . . . . 3 - 4 rimm module functional diagram . . . . . . . . . . . . . . . . . . 5 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . 6 dc recommended electrical conditions . . . . . . . . . . . . . . 6 rimm module supply current profile . . . . . . . . . . . . . . . . 7 ac electrical specifications . . . . . . . . . . . . . . . . . . . . . 8 - 9 physical dimensions -1, -2 ( for pcb ) . . . . . . . . . . 10 - 11 physical dimensions -3, -4 ( for heat spreader) . . . 12 - 13 standard rimm module marking. . . . . . . . . . . . . . . . . . . 14 copyright ? may 2004, samsung electronics. all rights reserved. direct rambus, direct rdram and so-rimm are trade- marks of rambus inc. rambus, rdram, rimm and the rambus logo are registered trademarks of rambus inc. this document contains advanced information that is subject to change by samsung elec tronics without notice document version 1.0 samsung electronics co. ltd. san #16 banwol-ri, taean-eup hwasung-city, gyeonggi-do, korea telephone: 82-31-208-6369 fax: 82-31-208-6799 http://www.intl.s amsungsemi.com


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